Accession Number : AD0912133
Title : LOC GaAlAs Laser Development.
Descriptive Note : Final rept. 17 Apr-31 Dec 72,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP
Personal Author(s) : Carr, David L. ; Doerbeck, Friedrich H.
Report Date : JUL 1973
Pagination or Media Count : 34
Abstract : LOC lasers for the wavelength of 8800 were fabricated by GA sub (1-x)Al sub x As. solution epitaxy. The emission beam angle was varied between 21 and 80 degrees by varying the optical index changes at the n-side cavity boundary. Output power data are presented for the temperature range of 25 to 70 C. External slope efficiencies in excess of 1 watt/A, and optical power densities greater than 4 watt/mil of facet width, were observed at room temperature. (Author)
Descriptors : (*LASERS, MANUFACTURING), OPTICS, EPITAXIAL GROWTH, GALLIUM ARSENIDES, ALUMINUM, TEMPERATURE, DENSITY, PHOTONS, SUBSTRATES, DOPING, GALLIUM ALLOYS, ALUMINUM ALLOYS, ARSENIDES, THICKNESS, POWER, EFFICIENCY.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE