Accession Number : AD0912964

Title :   Integrated-Circuit Process Control and Development.

Descriptive Note : Final rept. 7 Feb 72-7 Apr 73,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP

Personal Author(s) : DeVries, Dale B. ; Lee, Gregg ; Watelski, Stacy

Report Date : AUG 1973

Pagination or Media Count : 163

Abstract : An evaluation of the integrated circuit process, designated E-1, used in the Air Force Avionics Integrated Circuit Facility, was made using photomicroscopy, scanning electron microscope, and spreading resistance measurement techniques. Based on previous data and this data, a new integrated-circuit process, designated E-2, was developed. A test bar was designed incorporating a variety of test structures to measure process parameters. The E-2 process was characterized and evaluated using this test bar. In addition, photomicroscopy, scanning electron microscope, incremental sheet resistance, and spreading resistance techniques were used to evaluate process results. Using these techniques, all the processes used for device fabrication were evaluated, including epitaxy, diffusion, photoresist, and metallization. Measurements were made to determine the F sub T of the devices produced. Further process improvements are recommended, particularly in the areas of photoresist and metallization. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MANUFACTURING), SEMICONDUCTOR DEVICES, SILICON, CARBON, DOPING, BORON, PHOTOENGRAVING, MASKING, DIFFUSION, TEST EQUIPMENT, PHOTOMICROGRAPHY, ELECTRON MICROSCOPY, ELECTRICAL RESISTANCE, PRODUCTION CONTROL, SUBSTRATES.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE