Accession Number : AD0913545

Title :   InAs Photodiode Mosaic.

Descriptive Note : Final technical rept. Jun 71-Jun 73,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY IMAGING DEVICES OPERATION

Personal Author(s) : Kim, James C.

Report Date : JUN 1973

Pagination or Media Count : 70

Abstract : InAs diode array infrared vidicon targets, which can be operated in a charge-storage mode via electron beam scanning, have been developed and demonstrated. The basic steps include (1) production of low leakage current array diodes, (2) effective target surface passivation to prevent the beam from landing on the n-substrate surface, and (3) deposition of a charge removing layer on the passivated dielectric surface. Reverse-biased InAs photodiodes yield an internal current gain by carrier impact ionization. The ionization rate for electrons is much greater than that for holes. Because of the low diode dark current, the operation of InAs photovoltaic detectors has led to a BLIP performance, approaching the theoretical limit. A preliminary study of the InAs MIS structure, performed to solve various surface-related device problems, has led to an interesting new type of infrared sensing device, the InAs MIS photodetector. Some experimental results for this new photodetector are presented here. It is recommended that InAs solid-state infrared imagers, using the surface charge-coupling concept, be developed for practical devices. (Author)

Descriptors :   *MOSAICS(LIGHT SENSITIVE)), (*PHOTODIODES, INDIUM ALLOYS), (*INFRARED DETECTORS, ARSENIDES, ARSENIC ALLOYS, VIDICONS, INFRARED RADIATION, AVALANCHE DIODES, ELECTRON BEAMS, IONIZATION, LEAKAGE(ELECTRICAL), TARGETS.

Subject Categories : Electrooptical and Optoelectronic Devices
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE