Accession Number : AD0914026

Title :   Production Engineering Measure for High Burnout Resistant Mixer Diodes.

Descriptive Note : Quarterly rept. no. 1, 1 May-31 Jul 73,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : Anand,Yoginder

Report Date : 31 JUL 1973

Pagination or Media Count : 70

Abstract : The object of this program is to develop the processes, techniques and manufacturing methods to manufacture S, X and Ku-band high burnout resistant mixer diodes. These diodes are to be used as replacement for 1N21, 1N23 and 1N78 type point contact diodes in existing S, X and Ku-band receivers. During the quarter, S, X and Ku-band Schottky barrier diodes were manufactured and were characterized for their RF performance. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, RELIABILITY(ELECTRONICS)), (*MIXERS(ELECTRONICS), VULNERABILITY), (*RADAR EQUIPMENT, TRANSMITTER RECEIVERS), RADAR PULSES, TRANSMIT RECEIVE TUBES, IMPEDANCE MATCHING, HEAT TRANSFER, NOISE(RADIO), LEAKAGE(ELECTRICAL), S BAND, X BAND, EPITAXIAL GROWTH, K BAND, PRODUCTION, MANUFACTURING, MAINTENANCE, SILICON, SPECIFICATIONS, MILITARY REQUIREMENTS

Subject Categories : Electrical and Electronic Equipment
      Active & Passive Radar Detection & Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE