Accession Number : AD0914703
Title : Radiation and Thermally Hardened Switching Materials.
Descriptive Note : Semi-annual rept. no. 2, 1 Jan-30 Jun 73,
Corporate Author : BELFER GRADUATE SCHOOL OF SCIENCE NEW YORK
Personal Author(s) : Raccah, Paul M.
Report Date : SEP 1973
Pagination or Media Count : 17
Abstract : It has been shown that stress induces electric field switching in NbO2 single crystals. It was also observed that the crystallographic 'a' direction was propitious to energy propagation. Furthermore, the switching characteristics under several field conditions have been studied, and the results are reported hereafter. They suggest that disorder rather than order could improve switching characteristics. (Author)
Descriptors : (*ELECTRONIC SWITCHES, SINGLE CRYSTALS), (*SEMICONDUCTOR DEVICES, SWITCHING), (*METAL OXIDE SEMICONDUCTORS, ANISOTROPY), ELECTRIC FIELDS, HEAT RESISTANT MATERIALS, NIOBIUM COMPOUNDS, DIOXIDES, PULSES, TRANSIENTS, ELECTRICAL RESISTANCE, RADIATION HARDENING, ELECTRODES, NIOBIUM, INDIUM, SPUTTERING.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE