Accession Number : AD0914914

Title :   Production Engineering Measures for Temperature Compensated Microcircuit Crystal Oscillator.

Descriptive Note : Quarterly rept. no. 4, 1 Dec 72-28 Feb 73.

Corporate Author : CTS KNIGHTS INC SANDWICH IL

Personal Author(s) : Thomann, Donald L. ; Hinnah, Howard D.

Report Date : 28 FEB 1973

Pagination or Media Count : 14

Abstract : The early examples of the silicon-on-sapphire C-MOS integrated circuit developed for the MCTCXO yielded excessive power consumption. Investigation showed the high power consumption to be directly related to the relatively low threshold voltage, Vth, of the C-MOS transistors on the integrated circuit. Integrated circuits were manufactured with higher values of threshold voltage which significantly reduced power consumption. (Author)

Descriptors :   *MICROCIRCUITS), *INTEGRATED CIRCUITS), (*CRYSTAL OSCILLATORS, (*METAL OXIDE SEMICONDUCTORS, TEMPERATURE CONTROL, PRODUCTION ENGINEERING, SILICON, SAPPHIRE, INVERTER CIRCUITS, CAPACITORS, VARACTOR DIODES, LEAKAGE(ELECTRICAL), TRANSISTORS, VOLTAGE, POWER, SUBSTRATES, HYBRID CIRCUITS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE