Accession Number : AD0916588
Title : Light Emitting Diode Array.
Descriptive Note : Final rept. 8 Jun-8 Oct 73,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Henderson, George A.
Report Date : NOV 1973
Pagination or Media Count : 14
Abstract : Four 15-element GaAsP light emitting diode arrays were fabricated and delivered to Night Vision Laboratory. Measured brightnesses of the emitting elements range higher than originally anticipated. The minimum brightness requirement at 10mA forward bias is 250 ftL, whereas all four delivered devices exhibited brightnesses of around 500 to 600 ftL and higher when measured at this current level. (Author)
Descriptors : (*LIGHT EMITTING DIODES, ARRAYS), EPITAXIAL GROWTH, ELECTROLUMINESCENCE, BRIGHTNESS, GALLIUM ARSENIDES, PHOSPHIDES, VISIBLE SPECTRA, SINGLE CRYSTALS, SUBSTRATES, DOPING, TELLURIUM, SEMICONDUCTOR JUNCTIONS, SILICON DIOXIDE, NIGHT VISION DEVICES, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE