Accession Number : AD0916806
Title : Exploratory Research and Development Program on III-V Semiconductor Crystals.
Descriptive Note : Final technical rept. 8 May 72-7 Nov 73,
Corporate Author : UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT
Personal Author(s) : Black, J. F.
Report Date : 28 JAN 1974
Pagination or Media Count : 44
Abstract : A summary is presented of the results achieved in an exploratory research and development program on III-V semiconductor crystals. High quality single crystals of undoped and doped GaAs and GaSb were grown in a horizontal Bridgman furnace. Selected lots of 400 grams of GaSb and 600 grams of GaAs were cut into < 100 > oriented wafers and delivered to Night Vision Laboratories. Two techniques were investigated for the preparation of homogeneous single crystals of Ga1-xInxAs with 0.3 < x < 0.7. Melt growth in a horizontal Bridgman furnace produced homogeneous ingots but no single crystals. Vapor phase transport of presynthesized Ga1-xInxAs in a closed tube, using iodine as the transport agent, produced single crystals platelets as large as 0.8 cm x 0.4cm and appears to be a promising technique for preparing single crystals of large dimensions. (Author)
Descriptors : *CRYSTALS), (*SEMICONDUCTORS, SINGLE CRYSTALS, QUALITY CONTROL, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, CRYSTAL GROWTH, FURNACES, DOPING, MELTING, VAPOR PHASES, SYNTHESIS(CHEMISTRY), IODINE, TRANSPORT, CONTAMINATION, PLATES, SOLIDIFICATION, VELOCITY, CHEMICAL COMPOSITION, OPTICS, ABSORPTION, RELIABILITY, WAFERS, NUCLEATION.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE