Accession Number : AD0917847

Title :   Modulator Driver Transistor.

Descriptive Note : Final rept. 15 Jun 72-15 Dec 74,

Corporate Author : TRW SEMICONDUCTORS LAWNDALE CA

Personal Author(s) : Parekh, P. C.

Report Date : MAR 1974

Pagination or Media Count : 49

Abstract : This report covers the work on Air Force Contract F33615-72-C-2092, Modulator Driver Transistor. The objective of the contract was to develop a high-speed switching transistor capable of handling one ampere of collector current. A switching transistor capable of handling 850mA of collector current with turn-on and turn-off times of 1.3 nanoseconds and 2.2 nanoseconds, respectively developed. The transistor was capable of handling one ampere of collector current, however, degradation in turn-off time resulted. The transistor utilized TRW's crossgrid structure while process development included arsenic as an emitter dopant for small base width and high emitter efficiency. (Author)

Descriptors :   *TRANSISTORS), (*ELECTRONIC SWITCHES, MICROWAVE EQUIPMENT, MICROWAVE FREQUENCY, SUBSTRATES, ARSENIC, METALLIZING, METAL OXIDE SEMICONDUCTORS, SILICON NITRIDES, FABRICATION, MODULATORS, DIFFUSION, PHOTOLITHOGRAPHY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE