Accession Number : AD0917847
Title : Modulator Driver Transistor.
Descriptive Note : Final rept. 15 Jun 72-15 Dec 74,
Corporate Author : TRW SEMICONDUCTORS LAWNDALE CA
Personal Author(s) : Parekh, P. C.
Report Date : MAR 1974
Pagination or Media Count : 49
Abstract : This report covers the work on Air Force Contract F33615-72-C-2092, Modulator Driver Transistor. The objective of the contract was to develop a high-speed switching transistor capable of handling one ampere of collector current. A switching transistor capable of handling 850mA of collector current with turn-on and turn-off times of 1.3 nanoseconds and 2.2 nanoseconds, respectively developed. The transistor was capable of handling one ampere of collector current, however, degradation in turn-off time resulted. The transistor utilized TRW's crossgrid structure while process development included arsenic as an emitter dopant for small base width and high emitter efficiency. (Author)
Descriptors : *TRANSISTORS), (*ELECTRONIC SWITCHES, MICROWAVE EQUIPMENT, MICROWAVE FREQUENCY, SUBSTRATES, ARSENIC, METALLIZING, METAL OXIDE SEMICONDUCTORS, SILICON NITRIDES, FABRICATION, MODULATORS, DIFFUSION, PHOTOLITHOGRAPHY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE