Accession Number : AD0918668
Title : Gallium Arsenide Digital Integrated Circuits.
Descriptive Note : Interim technical rept. 19 Mar-31 Dec 73,
Corporate Author : HEWLETT-PACKARD LABS PALO ALTO CA
Personal Author(s) : Van Tuyl, Rory L. ; Liechti, Charles A.
Report Date : MAR 1974
Pagination or Media Count : 61
Abstract : This report describes the results of Phase I of the Gallium Arsenide Digital Integrated Circuits program, which was intended to demonstrate the feasibility of fabricating digital circuits with GaAs metal-semiconductor field-effect transistor (MESFET) technology. Dc, RF and switching parameters of the GaAs MESFET were characterized, a large-signal nonlinear device model developed and verified with the characterization data and a MESFET logic gate fabricated. The logic gate exhibited a propagation delay of 60 ps plus 15 ps per output load and a useful bandwidth of 3-4 GHz. Based on these experimental results, it is predicted that practical medium-scale logic systems with 2-3 GHz clock rates will be possible. Progress in the development of a MESFET process with self-aligned gate is reported. (Author)
Descriptors : , , (*INTEGRATED CIRCUITS, GALLIUM ARSENIDES), FIELD EFFECT TRANSISTORS, SEMICONDUCTOR DEVICES, SOLID STATE ELECTRONICS, GATES(CIRCUITS), LOGIC CIRCUITS, DIRECT CURRENT, RADIOFREQUENCY, ELECTRONIC SWITCHES, FABRICATION, MODELS, BANDWIDTH, NONLINEAR SYSTEMS, RELAXATION OSCILLATORS, SUBSTRATES, SCHOTTKY BARRIER DEVICES, ELECTRONIC SWITCHING, DIGITAL SYSTEMS, FEASIBILITY STUDIES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE