Accession Number : AD0918930

Title :   1.06 Micrometer High Sensitivity IR Photocathode.

Descriptive Note : Final rept. 6 Mar 72-31 Dec 73,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s) : Harris, J. S., Jr. ; Sahai, R.

Report Date : APR 1974

Pagination or Media Count : 64

Abstract : The design and progress towards development of a field-assisted double heterojunction photocathode with high quantum efficiency at 1.06 micrometers is reported. This project covers three main areas: (1) The growth by liquid phase epitaxy and characterization of GaAsSb and GaAlAsSb alloys of suitable composition for fabricating a heterojunction photocathode. (2) Experimental and theoretical studies on the electron and hole transport and optical properties of heterojunctions between various III-V alloys grown by liquid phase epitaxy. (3) The design, fabrication and testing of a double heterojunction p-n-p photocathode structure with a p-n junction collector. Experimental studies on the electrical transport and optical properties of the heterojunctions required for the photocathode show that the anticipated problems with potential barriers in the conduction band do not exist. These results have significant implications for many other heterojunction devices. Internal photoemission in the complete photocathode test structure has been observed establishing the feasibility of the double heterojunction approach.

Descriptors :   *INFRARED DETECTORS), (*PHOTOCATHODES, EPITAXIAL GROWTH, EFFICIENCY, LIQUID PHASES, FABRICATION, NEODYMIUM, LONG WAVELENGTHS, SENSITIVITY, GALLIUM ALLOYS, ARSENIC ALLOYS, ALUMINUM ALLOYS, OPTICAL PROPERTIES, TRANSPORT PROPERTIES, GALLIUM ARSENIDES.

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE