Accession Number : AD0923932
Title : Radiation and Charge Injection in Al203 Using New Techniques.
Descriptive Note : Interim rept. 17 Dec 73-16 Jun 74,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Powell, Richard J.
Report Date : 15 JUL 1974
Pagination or Media Count : 29
Abstract : Studies of high-field charge injection of Al203 MOS structures, with purposely introduced Si02 films between the Si and Al203, have shown that very thin Si02 (approximately 40 angstroms) actually enhances the electron injection. Thicker films of Si02 (approximately or greater than 70 angstroms) can markedly reduce the electron injection for a given applied field in the Al203. Unfortunately, the Si02 layer, while reducing electron injection, increases the radiation sensitivity. Vacuum UV radiation studies of the gate bias dependence of flatband shift have shown quite unusual results which have been explained by a model that involves electron-hole pair generation and high-field electron injection. One measurement of the energy dependence of positive charge buildup indicates a threshold for this effect slightly above 7 eV. Photoinjection charging studies of samples with and without Si02 interlayers have confirmed that with no Si02 initial trapping occurs very near the Si-Al203 interface. With Si02 present, the initial trapping is still in the Al203 and very near the Si02-Al203 interface. The result is signficant in that it shows that the traps are not intrinsic to the Si-Al203 interface. (Author)
Descriptors : *RADIATION HARDENING), (*METAL OXIDE SEMICONDUCTORS, SEMICONDUCTING FILMS, ALUMINUM COMPOUNDS, OXIDES, CHARGE CARRIERS, SILICON COMPOUNDS, SILICON COATINGS, VACUUM, ULTRAVIOLET RADIATION, ELECTRONS, SUBSTRATES, WAFERS, PHOTONS.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE