Accession Number : ADA008181

Title :   Trap Distribution in Semiconductors.

Descriptive Note : Final rept. 1 Jul 71-30 Jun 74,

Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS

Personal Author(s) : Anderson,W. W.

Report Date : NOV 1974

Pagination or Media Count : 57

Abstract : Impurity or defect levels in luminescent semiconductors have been studied to evaluate the usefulness of infrared stimulable phosphors in an infrared imaging device. ZnS phosphors and crystals which are sensitive in the spectral ranges of three is less than lambda is less than five and eight is less than lambda is less than 10 micrometer have been prepared. An expression for the display signal to noise ratio of an IR imaging device based on traditional models of the IR stimulation process has been derived. The theory has been qualitatively checked with an IR telescope. However, contrast enhancement is necessary for a useful device. Equipment has been developed for the rapid evolution of phosphor characteristics pertinent to IR stimulated luminescent imaging from a thermal source.

Descriptors :   *Semiconductors, *Photoconductors, *Infrared detectors, Phosphors, Infrared images, Zinc sulfides, Defects(Materials), Impurities, Optical filters, Sapphire, Carbon dioxide lasers, Infrared telescopes, Energy levels, Luminescence, Optical equipment

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE