Accession Number : ADA008797

Title :   Laser Light Scattering from Electrons and Phonons in Wide Bandgap Semiconductors.

Descriptive Note : Final rept. Jun-Aug 74,


Personal Author(s) : Scott,J. F.

Report Date : FEB 1975

Pagination or Media Count : 35

Abstract : The aim of this study was the detection and characterization of impurity states in II-VI and I-III-VI2 semiconductors. Three techniques were employed to this end: (1) EPR at various temperatures; (2) local mode vibrational Raman spectroscopy; (3) spin-flip laser scattering at very high fields (= or > 150 kG). These studies of impurity states facilitate the development of quality control standards for two important classes of semiconductors. Substitutional impurities play a key role in the operation of p-n junction devices in these materials. It was felt that the detection of impurity states with very high g-values (of order ten) might lead to spin-flip lasers operative in the near IR with large tuning ranges. In fact, impurities with g approximately equal to 8 have been found in both CuAlS2 and CuGaS2 in the present study.

Descriptors :   *Semiconductors, *Impurities, *Detection, Electron paramagnetic resonance, Lasers, Spectroscopy, Zinc tellurides, Sulfides, Copper compounds, Aluminum compounds, Gallium compounds, Light scattering, Quality control, Infrared lasers, Tuning devices, Raman spectra

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE