Accession Number : ADA009158

Title :   Hydrostatic Pressure Effects on Interband Transitions of Semiconductors.

Descriptive Note : Final rept. Jan-Dec 73,


Personal Author(s) : Halpern,T. ; Raccah,P. M. ; Wolfe,M. M.

Report Date : JAN 1975

Pagination or Media Count : 84

Abstract : The purpose of this report is to describe the effect of hydrostatic pressure on the interband transitions of GaAs, ZnSe:Al, and GaP:N diodes. Combined electroreflectance with hydrostatic pressure techniques was used to study the dependence of the E sub 1 and E sub 1 + delta sub 1 transition of GaAs, while the pressure dependence of the direct edge transition E sub 0 of GaAs was determined from photocurrent measurements. Photocurrent and electroluminescence measurements were performed on a ZnSe:Al light emitting diode under the influence of hydrostatic pressure in order to provide a more nearly complete understanding of the radiative-recombination process at room temperature and also to study the behavior of the deep level centers under hydrostatic pressure. The measurements performed under hydrostatic pressure indicated that the deep lying impurity levels possess a larger deformation potential than the direct edge. It was found that the intensity of the A-line decreases with increasing pressure, in both of the measurements.

Descriptors :   *Semiconductors, *Electron transitions, *Hydrostatic pressure, Band theory of solids, Gallium arsenides, Zinc selenides, Gallium phosphides, Semiconductor diodes, Nitrogen, Aluminum, Photoconductivity, Electroluminescence, Recombination reactions, Impurities, Deformation

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE