Accession Number : ADA016936
Title : Theoretical Considerations of Tunneling through Thin Film Heterojunctions.
Descriptive Note : Technical memo.,
Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK APPLIED RESEARCH LAB
Personal Author(s) : Liepold,William C.
Report Date : 03 MAR 1975
Pagination or Media Count : 200
Abstract : An 'atomic' barrier model of a metal-insulator-metal heterojunction is developed. This one-dimensional model consists of a square barrier, containing a number of uniformly spaced 'atomic' wells, between two Bohr-Sommerfeld metals. Within this model, the elastic tunneling transmission coefficient is calculated without approximation for a variety of externally applied electric fields. Several approximation schemes, based on extension of Zener's modified WKB approximation for interband tunneling, are considered. The effect of disorder on the nature of the electronic wavefunction in the insulating barrier is examined within the 'atomic' barrier model. A method of characterizing the nature of the electronic states near the 'band' edges of a thin topologically disordered insulating region is developed and interpreted in terms of theoretical notions which apply strictly only to bulk samples.
Descriptors : *Tunneling(Electronics), *Semiconductor junctions, Thin films, Band theory of solids, Semiconducting films, Mathematical analysis, Disorder, Electric fields, Theses
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE