Accession Number : ADA016939
Title : Long Term Memory in Junction Devices Using Multivalent Trapping Impurities in Silicon.
Descriptive Note : Semiannual rept. 1 Sep 74-31 Jan 75,
Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
Personal Author(s) : Holm-Kennedy,J. W. ; Domingo,G. ; Kingsley,W.
Report Date : AUG 1975
Pagination or Media Count : 61
Abstract : Various multivalent dopants were investigated with the goal of obtaining nonvolatile multilevel memory devices in silicon using the Field Induced Trapping (FIT) effect. The test structures included Schottky diodes and resistive bars fabricated in silicon substrates suitably doped with multivalent dopants. Novel device effects were observed and are described. A model for a negative differential resistance Schottky barrier oscillator is proposed.
Descriptors : *Silicon, *Semiconductor devices, *Trapping(Charged particles), Schottky barrier devices, Sulfur, Semiconductor doping, Zinc, Cobalt, Nickel, Impurities, Semiconductor diodes, Semiconductor junctions, Energy bands, Electrical resistivity, Temperature
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE