Accession Number : ADA016964

Title :   The Physics of Reliability of Future Electronic Devices.

Descriptive Note : Semi-annual technical rept. no. 1, 1 Jun-Nov 75,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s) : DiStefano,Thomas H. ; Tu,King-Ning

Report Date : 30 NOV 1974

Pagination or Media Count : 154

Abstract : The following investigations are discussed in the report: (1) A dielectric breakdown model for wide bandgap insulators has been developed using the concept of impact ionization; For SiO2, it predicts a current density and an average field at breakdown which increase rapidly for film thickness below 200A, indicating that a thin gate insulator may be advantageous in MOS devices. (2) Semiconductor surface states at metal-semiconductor interface have been measured for the first time using a new photoelectron spectroscopy technique; (3) A scanned surface photovoltage method has been developed to produce images that have a resolution of the order of 2 micrometers. The scanned surface photovoltage technique is very powerful as a diagnostic tool in silicon processing. (4) Implanted noble gas atoms of Ar and Xe have been used as diffusion markers in growth studies of several silicide thin films.

Descriptors :   *Semiconductor devices, *Interfaces, *Metal oxide semiconductors, *Dielectrics, Silicon dioxide, Schottky barrier devices, Photoelectric emission, Surface properties, Diffusion, Ionization, Ion implantation, Current density, Silicides, Silicon, Test methods, Reliability(Electronics), Tracer studies, Argon, Xenon, Thin films, Defects(Materials), Amorphous materials

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE