Accession Number : ADA016965
Title : The Physics of Reliability of Future Electronic Devices.
Descriptive Note : Semi-annual technical rept. no. 2,
Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
Personal Author(s) : DiStefano,Thomas H. ; Tu,King-Ning
Report Date : 30 NOV 1975
Pagination or Media Count : 122
Abstract : The following investigations are discussed in the report: (1) At several metal-SiO2 interfaces, it was found that interdiffusion of the metal into the insulator induces a dipole layer which comprises a significant portion of the surface potential. The significance of this finding is that surface effect devices (MOS,CCD), which depend upon a stable surface potential, may be sensitive to changes in the dipole layer produced by time, temperature, electric fields, and impurties; (2) Transport measurements were performed on Si3N4 films deposited on Si. The valence band structure of Si3N4 and amorphous SiO2 has been examined by X-ray photoemission spectroscopy; (3) Near-noble metals react with Si single crystals to form a metal-rich silicide at 100C to 200C. The low temperature reaction is explained by proposing an interstitial model; (4) A review on the nature of thin film interfacial reactions with examples from the field of integrated circuits is given. The study of the reactions can be facilitated by a combination of three analytical tools--depth profiting by nuclear backscattering, surface analytical techniques combined with layer removal by sputtering and glancing angle X-ray diffraction.
Descriptors : *Semiconductor devices, *Interfaces, *Metal oxide semiconductors, *Dielectrics, Dipole moments, Schottky barrier devices, Silicon nitrides, Silicon, Substrates, Electron transport, Holes(Electron deficiencies), Valence bands, Amorphous materials, Diffusion, X ray diffraction, Band theory of solids, Gold, Silicides, Defects(Materials), Integrated circuits, Test methods, Surface reactions, Backscattering, Sputtering
Subject Categories : Electrical and Electronic Equipment
Test Facilities, Equipment and Methods
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE