Accession Number : ADA017022

Title :   Transient Radiation Effects.

Descriptive Note : Final rept. Jun 73-Jan 75,

Corporate Author : INTELCOM RAD TECH SAN DIEGO CALIF

Personal Author(s) : Flanagan,Terry M. ; Kalma,Arne H. ; Leadon,Roland E. ; Naber,James A. ; Snowden,Donald P.

Report Date : MAR 1975

Pagination or Media Count : 110

Abstract : Studies are presented of the effects of the interaction of radiation with matter. Displacement damage in compound semiconductors is considered, with emphasis on GaAs. The temperature dependence of electron damage is determined, as well as the relative damage as a function of electron and neutron energy. Transient conductivity measurements on GaAs have been able to detect carrier lifetime at 300K in the nanosecond range. The response of AlSiO2Si (n-type) MOS devices to pulsed 30-MeV electron irradiations has led to the identification of a new charge-transfer effect. Models are presented of this effect and of gate threshold shifts for clean oxides and aluminum ion-implanted clean oxides using the PN code. Also presented is a study of the dependence of the charge released to an external circuit by a capacitor subsequent to burn-in through both thermal and radiation-induced depolarization of the space-charge fields.

Descriptors :   *TRANSIENT RADIATION EFFECTS, *SEMICONDUCTORS, *INSULATION, *METAL OXIDE SEMICONDUCTORS, *GALLIUM ARSENIDES, ELECTRON IRRADIATION, FISSION NEUTRONS, SILICON, CHARGE TRANSFER, ELECTRIC CONTACTS, POINT DEFECTS, CHARGE CARRIERS, POLYMERS, DIELECTRICS, CAPACITORS, ELECTRICAL CONDUCTIVITY, IONIZATION, DEFECTS(MATERIALS), ALUMINUM, OXIDES, SPACE CHARGE, TETRAFLUOROETHYLENE RESINS, POLYETHYLENE TEREPHTHALATE, ION IMPLANTATION, GATES(CIRCUITS)

Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE