Accession Number : ADA017450
Title : Anisotropic Transport Effects in IGFETS.
Descriptive Note : Annual rept. no. 1,
Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE
Personal Author(s) : Holm-Kennedy,James W.
Report Date : JUL 1975
Pagination or Media Count : 10
Abstract : The project deals with investigations into charge transport and subbanding in semiconductor FET systems. It has been observed that the transport anisotropy diminishes with decreasing MOSFET inversion density. This is interpreted as a washing-out of the subband structure by the channel width modulating effects of the trapped surface charge.
Descriptors : *Semiconductors, *Field effect transistors, Charge transfer, Electron transport, Band theory of solids, Surfaces, MOSFET semiconductors, Anisotropy, Interfaces, Semiconductor junctions, Silicon, Silicon dioxide, Trapping(Charged particles)
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE