Accession Number : ADA017475
Title : Avalanche and Depletion Region Widths for Uniformly Doped Gallium Arsenide Impact Avalanche Transit Time Diodes.
Descriptive Note : Research and development technical rept.,
Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Personal Author(s) : Klohn,Kenneth L. ; Armata,John F. , Jr
Report Date : NOV 1975
Pagination or Media Count : 44
Abstract : High dc to rf conversion efficiency is one of the primary objectives in designing impact avalanche transit time (IMPATT) devices. To aid in the design for best efficiency for any given frequency, it is very desirable to know the size of the avalanche region and depletion layer as a function of the doping concentration in the material. This report summarizes the dc analysis used to determine values of breakdown voltage, depletion layer width, maximum electric field, avalanche width to depletion width ratio, dc to rf conversion efficiency and the range of possible transit time frequencies, all as a function of doping concentration between 1 x 10 to the 15th and 1 x 10 to the 17th atoms per cu cm. A calculator program is presented to perform the above calculations. Comparisons were made among four different sets of constants found in the literature for the ionization rate equation at room temperature and three sets for an operating temperature of 200 degrees Celsius. Calculations were made for a uniformly doped gallium arsenide IMPATT device which is the simplest structure to fabricate.
Descriptors : *IMPATT diodes, Gallium arsenides, Doping, Breakdown(Electronic threshold), Direct current, Computer programs, Electrical properties
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE