Accession Number : ADA017883

Title :   Radiation Damage to Junction and MOS Transistors,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Demes,S. ; Pellionisz,P. ; Szlavik,F.

Report Date : 12 NOV 1975

Pagination or Media Count : 14

Abstract : Investigations of radiation induced damage of such transistors are reported which find application in electronic equipments explosed to nuclear sources of high intensity. The mechanism of the effect of radiation is described and it is shown that in the case of nuclear reactors the effect of fast neutrons is of critical importance. In the experiments on OC 44K and MOS FET transistors irradiated in the core of a VVRS-reactor the radiation effect was manifested in both types most markedly by the decrease in collector corrent, appreciable in the former already at a fast neutron dose of 10 to the 13th power n/cm squared while in the latter at doses higher by 1-2 orders of magnitude. The experimental data may be helpful to determine the optimum location of an electronic equipment containing radiation sensitive elements and the appropriate choice of the nuclear shielding.

Descriptors :   *Metal oxide semiconductors, *Field effect transistors, *Radiation effects, Radiation shielding, Germanium, Silicon, Translations, Hungary, Neutron irradiation, Gamma rays

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE