Accession Number : ADA017948

Title :   Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions.

Descriptive Note : Technical rept.,

Corporate Author : ARMY MATERIEL SYSTEMS ANALYSIS ACTIVITY ABERDEEN PROVING GROUND MD

Personal Author(s) : Sheldon,John F.

Report Date : JUL 1975

Pagination or Media Count : 191

Abstract : This research derives expressions which show that the current-voltage characteristics of Schottky Barrier and P-N junctions are modified when doping levels are increased to degenerate levels. Such doping in these devices are extant in state-of-the-art technology for high-speed switches and highly stable current/voltage regulators. The experimental items for this research were Schottky-Barrier (Al n - Si) zener diodes. Good agreement was established between the degenerate theory and the more highly doped Schottky Barrier samples.

Descriptors :   *Schottky barrier devices, *Semiconductor junctions, *Semiconductor doping, Voltage regulators, Switching, Aluminum, Silicon, Semiconductor diodes, Reliability(Electronics), Recombination reactions, Current density, Electron transport, Computer applications, Thermionic emission

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE