Accession Number : ADA018519

Title :   Experimental Analysis of Impurity Energy Levels in Semiconductors.

Descriptive Note : Final rept. 1 Nov 70-30 Jun 74,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s) : Crowell,C. R.

Report Date : 20 OCT 1975

Pagination or Media Count : 13

Abstract : The major emphasis of this investigation was intended as a clarification of the extent to which deep-lying impurity levels can be explored capacitively in metal-semiconductor systems. A simple lumped constant equivalent circuit representation was developed for a distribution of energy levels of majority carrier trapping centers in Schottky barriers. An improved electronically balanced broad band capacitance measuring system was designed, built for measurements from about 10 H z to 200 kHz. The Hf-p type Si Schottky barrier system was investigated and shown to have approximately 0.6 ev barrier height. The hole capture cross-section for In in p-type Si was measured over the temperature range 58 K to 133 K.

Descriptors :   *Semiconductors, *Band theory of solids, *Energy levels, *Schottky barrier devices, Impurities, Silicon, Indium, Trapping(Charged particles), Capacitance

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE