Accession Number : ADA018676

Title :   Top Collector Contacted Microwave Power Transistor.

Descriptive Note : Quarterly rept. for period ending 1 Jul 75,

Corporate Author : TRW INC LAWNDALE CALIF SEMICONDUCTOR DIV

Personal Author(s) : Harrington,Al ; Schreyer,George ; Steenbergen,Jim

Report Date : AUG 1975

Pagination or Media Count : 82

Abstract : This report covers the first six months of work on Naval Research Contract No. N00014-75-C-0405, (Top Collector Contacted Microwave Power Transistor.) The objective of the contract is to investigate the monolithic integrated circuit approach for the fabrication of RF power transistors and associated matching networks to eliminate hand working, wire bonding and to provide improved uniformity, yield, reliability and ultimately, lower cost. Specifically, Phase I of this work calls for an all top contacted 30 Watt, 1 to 1.5 GHz power transistor. During this reporting period work has been completed on the top contacted design and the first devices. The design is of the interdigitated type and utilizes several innovative design techniques for improved performance and reliability which are discussed. (Author)

Descriptors :   *Junction transistors, *Electric contacts, Integrated circuits, Monolithic structures(Electronics), Radiofrequency power, Bonding, Substrates, Diffusion, Reliability(Electronics)

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE