Accession Number : ADA018760
Title : The Use of Ion Implantation for the Control of Impurity Diffusion in III-V Compound Semiconductors.
Descriptive Note : Final rept. 1 May 72-30 Apr 75,
Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
Personal Author(s) : Gibbons,James F.
Report Date : SEP 1975
Pagination or Media Count : 16
Abstract : The report summarizes research carried out under one Contract. The principal results obtained were: (1) Proton-enhanced diffusion was used for the first time to obtain Se diffusion in GaAs. Seventy percent electrical activity was obtained for a dose of 10 to the 14th power Se/sq cm, which is the highest electrical activity yet reported for this dose level. (2) A theory was developed to explain the relatively low doping efficiency of n-type dopants in GaAs, a phenomenon that is always present though especially apparent in ion-implanted samples. (3) Wide range control over the diffusion coefficient of Zn in GaAs(0.6)P(0.4) was obtained through the use of multiple implants of Zn, Ga, As, and/or P. A theory was developed to explain the magnitude of the control in terms of thermodynamic restrictions on the range of gallium vacancy concentrations that can exist at equilibrium in the material. (4) Proton-enhanced diffusion (PED) was used to introduce Cd into InSb. A new Cd diffusion source and a new technique for the anodic stripping of InSb were developed in the course of the work.
Descriptors : *Semiconductor doping, *Ion implantation, *Diffusion, Gallium arsenides, Selenium, Zinc, Gallium phosphides, Gallium, Arsenic, Phosphorus, Protons, Cadmium, Indium antimonides, Light emitting diodes, Microwave equipment
Subject Categories : Electrooptical and Optoelectronic Devices
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE