Accession Number : ADA018899
Title : Advanced Solid State Microwave Techniques.
Descriptive Note : Phase rept.,
Corporate Author : CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s) : Dalman,G. C. ; Eastman,L. F. ; Lee,C. A. ; Frey,J.
Report Date : NOV 1975
Pagination or Media Count : 237
Abstract : This report describes the research accomplished during the third biannual period of a three year research program dealing with advanced concepts of microwave generation and control in solids. A report is made on microwave solid state devices and circuits. Included are: GaAs Read Diodes; Amplifier Characteristics; Measurement of IMPATT Diode Amplifier Parameters; Computer Experiments on TRAPATT Diodes; High Power and Efficiency CW Transferred Electron Oscillators; Compound Semiconductor Transistor Study; Automated Network Analyzer; Submicron Gate Field Effect Transistor; IMPATT Diode Load Characteristics; and Interaction of Distributed IMPATT Oscillators. A report is also made on materials and fabrication techniques. The topics discussed are: The Epitaxial Growth of Thin GaAs Layers; Read Structures; and Electric-Current-Controlled LPE Growth of GaAs.
Descriptors : *Microwave oscillators, *Solid state electronics, *Semiconductor devices, IMPATT diodes, Gunn diodes, Gallium arsenides, Field effect transistors, Microwave equipment, Epitaxial growth, TRAPATT devices, Semiconducting films, Microwave amplifiers
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE