Accession Number : ADA019036
Title : Production Engineering Measure for High Burnout Resistant Mixer Diodes.
Descriptive Note : Final rept.,
Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS
Personal Author(s) : Anand,Y.
Report Date : OCT 1975
Pagination or Media Count : 240
Abstract : This report describes the Production Engineering of S, X, and Ku-band silicon Schottky barrier mixer diodes. Low barrier, high burnout and high sensitivity Schottky diodes have been developed for broadband applications. Titanium on n-type silicon forms the metal semiconductor barrier. These diodes simulate the microwave characteristics of conventional 1N21, 1N23 and 1N78 point contact diodes and are directly replaceable in existing standard mixers. A pilot line was established to fabricate the diodes for reliability testing and to supply the U.S. Army with 145 diodes of each type. Laboratory pulse burnout experiments are reported. (Author)
Descriptors : *Schottky barrier devices, *Semiconductor diodes, Burnout, Mixers(Electronics), Broadband, Titanium, Silicon, N type semiconductors, S band, X band, Ku band, Production engineering
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE