Accession Number : ADA019131
Title : High Efficiency Solid-State C-Band Generator.
Descriptive Note : Final technical rept. 24 Jun 74-24 Jun 75,
Corporate Author : RAYTHEON CO WALTHAM MASS RESEARCH DIV
Personal Author(s) : Wallace,R. N.
Report Date : NOV 1975
Pagination or Media Count : 151
Abstract : Progress toward the development of a 10 W CW 5 GHz generator having more than 25 percent efficiency and capable of being combined with similar units to produce 50 W output is described. GaAs Read IMPATT diodes were used as active elements. Procedures for the growth and analysis of epitaxial GaAs wafers having doping profiles appropriate for C-band Read diodes were developed. Wafers selected for processing were fabricated into four-mesa PHS diodes. The better units typically achieved 4.5-5 deg. C/W thermal resistance, and had power CW power outputs of 10 W or more with 20-25 percent efficiency in the 5 GHz range. Active current regulators were developed which allowed stable operation of the diodes with good overall system efficiency. A 6-diode TM010-mode cavity-type oscillator was constructed which delivered 60 W CW output near 5.1 GHz with approximately 20 percent efficiency. The major program objectives were achieved or closely approached. (Author)
Descriptors : *Impatt diodes, *Microwave oscillators, Gallium arsenides, Epitaxial growth, C band, Efficiency, Doping
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE