Accession Number : ADA019155
Title : Neutron Hardness Assurance for Bipolar Transistors through Determination of Physical Parameters.
Descriptive Note : Final rept.,
Corporate Author : NAVAL AMMUNITION DEPOT CRANE IND
Personal Author(s) : Blice,R. D. ; Munarin,J. A.
Report Date : NOV 1975
Pagination or Media Count : 199
Abstract : A nondestructive method of neutron radiation hardness assurance is developed for bipolar transistors using a detailed one-dimensional model to obtain the powers (sensitivity parameters) relating postirradiation h sub FE and V sub CE(sat) at any operating point to preirradiation physical parameters and preirradiation electrical measurements at specified operating points. The transistor model uses physical dimensions, doping concentrations, diffusion constants, electric fields, and minority carrier lifetimes determined from terminal electrical measurements. The sensitivity parameters are applied to (1) predicting postirradiation h sub FE and V sub CE(sat) from preirradiation electrical measurements and the physical parameters extracted from them and (2) establishing upper or lower bounds on preirradiation physical parameters. In this study, sensitivity parameters are calculated for a medium-power double-diffused planar epitaxial NPN device (2N2222A).
Descriptors : *BIPOLAR TRANSISTORS, RADIATION RESISTANCE, NONDESTRUCTIVE TESTING, NEUTRON IRRADIATION, PREDICTIONS, COMPUTER PROGRAMS, FORTRAN, TRANSIENT RADIATION EFFECTS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE