Accession Number : ADA019189
Title : Testing and Characterization of Radiation Hardened C-MOS Devices.
Descriptive Note : Progress rept. Fiscal Year 1974,
Corporate Author : HARRY DIAMOND LABS ADELPHI MD
Personal Author(s) : Eisen,Harvey A. ; Epstein,Arnold S. ; Polimadei,Roland A.
Report Date : AUG 1975
Pagination or Media Count : 44
Abstract : The susceptibility to ionizing radiation of small sample lots of candidate hardened C-MOS devices was evaluated. All except an early pilot line device with an undoped SiO2 gate dielectric exhibited small total dose susceptibility out of 1,000,000 rads (Si). Other studies (e.g., annealing and high temperature performance) also are reported. A test plan for more extensive evaluation of larger lots is discussed. Future work will concentrate on instrumentation development to implement that test plan and evaluation of new samples according to the plan.
Descriptors : *SEMICONDUCTOR DEVICES, *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, RADIATION EFFECTS, RADIATION HARDENING, TRANSIENT RADIATION EFFECTS, IONIZING RADIATION, TEST METHODS, GAMMA RAYS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE