Accession Number : ADA019447

Title :   Anodic Oxidation of Gallium Arsenide and Gallium Arsenide Phosphide.

Descriptive Note : Technical rept.,

Corporate Author : ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB

Personal Author(s) : Tsang,Dean Zensh

Report Date : DEC 1975

Pagination or Media Count : 49

Abstract : The purpose of the work described here is twofold. The first is to study the anodization process and the resulting oxide films. The second is to examine possible applications of the oxide for encapsulation purposes. The intent of this chapter shall be to provide a brief introductory background into anodic oxidation. (Author)

Descriptors :   *Gallium arsenides, *Anodic coatings, *Oxidation, Gallium phosphides, Oxides, Films, Refractive index, Dielectric properties, Annealing, High temperature

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE