Accession Number : ADA019516

Title :   Surface and Bulk Electronic Phenomena in Solids.

Descriptive Note : Final rept. 15 Sep 71-14 Sep 75,


Personal Author(s) : Sah,C. T.

Report Date : NOV 1975

Pagination or Media Count : 28

Abstract : Experimental and theoretical studies have been undertaken on the atomic origins, the electronic properties and the generation, annealing and migration kinetics of the oxide charges and interface surface states in the silicon oxide-silicon MOS system. The two principle electronic properties of these oxide charges and interface surface states as well as the imperfection centers located in surface space charge layer of silicon are studied. These are: (1) The density of state and the carrier recombination, generation and trapping properties at the interface states and at the centers located in the surface space charge layer and (2) The mobilities of electrons and holes in the silicon surface layer due to the scattering by the spatially randomly distributed oxide charges and charged as well as neutral interface states and by the lattice vibrations or phonons. These properties are related to the electrical characteristics of MOS devices, including MOS capacitors, MOS transistors and special structures which simulate electron-beam accessed MOS mass memory devices. A novel distributed bistable MOS transistor with voltage controlled negative resistance characteristics is also studied.

Descriptors :   *Metal oxide semiconductors, *Band theory of solids, Interfaces, Surface properties, Capacitors, Field effect transistors, Silicon dioxide, Silicon, Semiconductor devices, Energy levels, Electron transfer, Holes(Electron deficiencies), Annealing, Recombination reactions, Crystal defects, Trapping(Charged particles), Electron mobility

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE