Accession Number : ADA019557
Title : Negative Microwave Resistance Effect in Zero-Gap Semiconductors.
Descriptive Note : Final rept. 15 Jun 74-31 Aug 75,
Corporate Author : NORTHWESTERN UNIV EVANSTON ILL DEPT OF PHYSICS
Personal Author(s) : Liu,L.
Report Date : 1975
Pagination or Media Count : 4
Abstract : The band structure of alpha-tin and HgTe under uniaxial tensile stress has been investigated. Both zero and finite-temperature transport calculations were performed. While zero-temperature calculations indicated the negative differential resistivity (NDR) effect exists under stress, the finite temperature calculations indicated that it would be difficult to obtain NDR at room temperature unless the ffect could be enhanced by scattering or band coupling not included in the calculation. (Author)
Descriptors : *Semiconductors, Band theory of solids, Negative resistance circuits, Holes(Electron deficiencies), Temperature, Tellurides, Mercury alloys, Electrons, Resistance
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE