Accession Number : ADA019834
Title : The Resonant Raman Effect in Semiconductors.
Descriptive Note : Final rept. 1 Sep 71-31 Aug 75,
Corporate Author : CITY COLL NEW YORK DEPT OF PHYSICS
Personal Author(s) : Callender,Robert H.
Report Date : 01 OCT 1975
Pagination or Media Count : 10
Abstract : The goal of this research was basically to measure the Raman scattering efficiency in various semiconducting compounds as a function of incident laser frequency. The basis phonon and electron features of these materials are similar but do exhibit differences. By comparing these differences with the differences in the Raman dispersion, a fuller theoretical understanding of the scattering process and features of the electron-optical phonon coupling results.
Descriptors : *Semiconductors, *Raman spectroscopy, Band theory of solids, Coherent radiation, Lasers, Phonons, Resonance scattering
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE