Accession Number : ADA019950

Title :   Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide.

Descriptive Note : Master's thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s) : Boulet,Dan L. , Jr

Report Date : DEC 1975

Pagination or Media Count : 76

Abstract : Three samples of GaAs were examined by depth resolved cathodoluminescence using electron beam energies from 5 KV to 25 KV at 10K and 80K. Samples 1 and 2 had been Cd implanted at 135 KV and annealed at 800C for 10 minutes; they received doses of 10 to the 15th power ion/sq cm and 10 to the 14th power ion/sq cm respectively. Sample 3 was n-type epitaxial and had not been intentionally doped. In the Cd implanted samples, the peak normally located near 1.488 eV at 10K (1.481 eV at 80K) was observed to shift to lower energy as the beam energy was reduced. This shift was interpreted as being caused by a depth dependent Cd concentration which was higher near the surface. Peak shifts as were observed in Samples 1 and 2 did not occur in the depth resolved spectra of Sample 3. From this study, it was concluded that using depth resolved cathodoluminescence spectra, energy shifts of peaks resulting from simple center recombinations can, under certain conditions, be used to estimate the extent of an implanted impurity concentration.

Descriptors :   *Gallium arsenides, *Ion implantation, *Cathodoluminescence, Semiconductor doping, Cadmium, Microwave equipment, Electron irradiation, Theses

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE