Accession Number : ADA020034

Title :   Investigation of Solution Epitaxial Growth and High-Field Electronic Properties of Indium Phosphide.

Descriptive Note : Final rept.,

Corporate Author : CORNELL UNIV ITHACA N Y

Personal Author(s) : Eastman,Lester F.

Report Date : 08 DEC 1975

Pagination or Media Count : 8

Abstract : This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.

Descriptors :   *Indium phosphides, *Epitaxial growth, *Semiconductors, Diffusion, Impurities, Carbon, Silicon, Microwave equipment

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE