Accession Number : ADA112038
Title : Ribbon Growth of Single Crystal GaAs for Solar Cell Application.
Descriptive Note : Final rept. 15 Aug 78-15 Aug 81,
Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
Personal Author(s) : Gould,Theresa A ; Seidensticker,Raymond G ; Mazelsky,Robert
PDF Url : ADA112038
Report Date : Nov 1981
Pagination or Media Count : 77
Abstract : This report describes the results of a 3-year effort to develop GaAs dendritic web for high-efficiency solar cells. A unique GaAs ribbon growth system was developed by applying dentritic-web growth techniques to a liquid-encapsulated GaAs system. Computerized thermal modelling and experimental modification produced a thermal geometry from which 48 GaAs webs were grown. These crystals had a multidendrite and/or faceted morphology rather than typical web morphology. Crystal quality improved as thermal geometry, growth techniques, dendrite seeds, and melt chemistry were optimized during the course of the program; however, conventional web morphology was not achieved. Analyses of chemical modification, crystal-growth characteristics, and orientation relationships suggest that inherent materials properties of GaAs produce an typical web morphology under conventional web-growth conditions. Consequently, a simple transfer of Si web growth technology to our GaAs system was inadequate for the growth of high quality GaAs web.
Descriptors : *Single crystals, *Gallium arsenides, *Crystal growth, Melts, Quality, Dendritic structure, Solar cells, Geometry, Morphology, Thermal properties, Webs(Sheets)
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE