Accession Number : ADA112038

Title :   Ribbon Growth of Single Crystal GaAs for Solar Cell Application.

Descriptive Note : Final rept. 15 Aug 78-15 Aug 81,

Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Personal Author(s) : Gould,Theresa A ; Seidensticker,Raymond G ; Mazelsky,Robert

PDF Url : ADA112038

Report Date : Nov 1981

Pagination or Media Count : 77

Abstract : This report describes the results of a 3-year effort to develop GaAs dendritic web for high-efficiency solar cells. A unique GaAs ribbon growth system was developed by applying dentritic-web growth techniques to a liquid-encapsulated GaAs system. Computerized thermal modelling and experimental modification produced a thermal geometry from which 48 GaAs webs were grown. These crystals had a multidendrite and/or faceted morphology rather than typical web morphology. Crystal quality improved as thermal geometry, growth techniques, dendrite seeds, and melt chemistry were optimized during the course of the program; however, conventional web morphology was not achieved. Analyses of chemical modification, crystal-growth characteristics, and orientation relationships suggest that inherent materials properties of GaAs produce an typical web morphology under conventional web-growth conditions. Consequently, a simple transfer of Si web growth technology to our GaAs system was inadequate for the growth of high quality GaAs web.

Descriptors :   *Single crystals, *Gallium arsenides, *Crystal growth, Melts, Quality, Dendritic structure, Solar cells, Geometry, Morphology, Thermal properties, Webs(Sheets)

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE