Accession Number : ADA112367

Title :   Preparation and Characteristics of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.

Descriptive Note : Final rept. Jul 78-Sep 81,

Corporate Author : STANFORD UNIV CA CENTER FOR MATERIALS RESEARCH

Personal Author(s) : Geballe,T H ; Feigelson,R S ; Elwell,D

PDF Url : ADA112367

Report Date : Sep 1981

Pagination or Media Count : 37

Abstract : Thin layers of SiC were electrodeposited from Li2CO3/SiO2 melts onto alpha-SiC substrates at 1000 - 1050 C using potential differences around -0.5V versus polycrystalline SiC anodes. The layers appear to be expitaxial. Although conditions were found under which the melt exhibited good long term stability, attempts to grow bulk SiC crystals were handicapped by delamination of the seed crystals. Attempts to electrodeposit SiC from K2SiF6/Li2CO3/LiF/KF and SiO2/Na2CO3/NaBO2/LiF melts yielded botryoidal deposits containing excess carbon. (Author)

Descriptors :   *Single crystals, *Preparation, *Epitaxial growth, *Silicon carbides, Electrolysis, Layers, Melts, Salts, Solid electrolytes, Crystal growth, High temperature, Sodium carbonates, Fluorides, Potassium compounds, Borates, Thinness

Subject Categories : Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE