Accession Number : ADA112673
Title : Carrier Localisation in Inversion Layers and Impurity Bands.
Descriptive Note : Final technical rept. 1 Sep 78-30 Nov 81,
Corporate Author : CAMBRIDGE UNIV (ENGLAND) CAVENDISH LAB
Personal Author(s) : Pepper,M
PDF Url : ADA112673
Report Date : Nov 1981
Pagination or Media Count : 55
Abstract : This report is principally concerned with our work on the physics of transport in two dimensional systems. We show that the logarithmic corrections to the conductance of Si inversion layers arise from both interaction and localization effects. Application of a magnetic field suppresses localization and enhances the role of interactions. At certain values of magnetic field both effects can be present, but with a different stability against increasing temperature. Consequently, heating the electron gas with an electric field allows the observation of a transition between them. Decreasing elastic scattering decreases the magnetic field required to suppress localization, as the enhancement of the interaction effect arises from spin a clear separation is obtained between the mechanisms.
Descriptors : *Mosfet semiconductors, *Charge carriers, *Inversion, *Layers, Transport properties, Elastic scattering, Interactions, Impurities, Magnetic fields, Electric fields, Electron gas, Separation, Ions, Heat treatment, Electron scattering, Silicon, Electrical conductivity, Diffusion, Two dimensional, Phonons, Gallium arsenides, Oscillation
Subject Categories : Electricity and Magnetism
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE