Accession Number : ADA112890
Title : Electrooptical Devices.
Descriptive Note : Semiannual technical summary rept. 1 Oct 80-31 Mar 81,
Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Personal Author(s) : Hurwitz,Charles E
PDF Url : ADA112890
Report Date : 31 Mar 1981
Pagination or Media Count : 42
Abstract : The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A study has been made of the etching technique used to delineate the active GaInAsP layer in GaInAsP/InP double-heterostructure lasers. A new method has been demonstrated for the prevention of thermal etching or decomposition of InP substrates prior to liquid-phase-epitaxial (LPE) growth. High-quality n(+) -InP layers over InGaAs have been grown from Sn solutions.
Descriptors : *ELECTROOPTICS, *SEMICONDUCTOR LASERS, *HETEROJUNCTIONS, LIQUID PHASES, AVALANCHE DIODES, PHOTODIODES, ION IMPLANTATION, DOSAGE, RADIATION ABSORPTION, EPITAXIAL GROWTH, MEASUREMENT, OPTICAL PROPERTIES, PROTON BOMBARDMENT, SOLID STATE CHEMISTRY, SUBSTRATES, ETCHING
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE