Accession Number : ADA112905
Title : Growth of InP Based Films Using the Hydride Growth Technique.
Descriptive Note : Final rept. 22 Oct 80-22 Oct 81,
Corporate Author : COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Jones,Kenneth A
PDF Url : ADA112905
Report Date : Jan 1981
Pagination or Media Count : 60
Abstract : A hydride growth system has been constructed that is capable of growing InGaAsP films or any ternary or binary combination. The system was designed to keep the background carrier density to a minimum as there are a number of device applications for low carrier concentration films. This was done by building a system that is leak tight down to .000001/cc, and constructing a forechamber from which the substrate can be magnetically loaded through a gate valve. Therefore, the growth zone is never opened to the atmosphere during a growth run. Thus far only InP films have been grown, but we plan to soon grow InGaAs films. The first films that were grown contained many hillocks, but their density was reduced in the later films by reducing the input HC1 concentration. The HC1 concentration in the deposition zone was increased by introducing HC1 downstream from the liquid indium. This was done to try to reduce the silicon contamination. However, we found that this greatly reduced the growth rate, and in some instances the substrate was actually etched. This also occurred when the input HC1 was not forced to come into intimate contact with the liquid indium. We, therefore, concluded that there was too much HC1 in the deposition zone which impeded the deposition process.
Descriptors : *Semiconducting films, *Indium phosphides, *Hydrides, *Epitaxial growth, Density, Deposition, Rates, Substrates, Gate valves, Contamination, Silicon, Hydrochloric acid
Subject Categories : Metallurgy and Metallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE