Accession Number : ADA112976

Title :   Wideband Monolithic Microwave Amplifier Study.

Descriptive Note : Annual technical rept. Jul 80-Aug 81,

Corporate Author : WISCONSIN UNIV-MADISON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Beyer,J B ; Becker,R C ; Nordman,J E

PDF Url : ADA112976

Report Date : Aug 1981

Pagination or Media Count : 42

Abstract : This report discusses distributed amplifier theory in the context of the microwave monolithic GaAs circuit. It is shown that GaAs FET devices dictate that both the input and output transmission lines become lossy which places fundamental limitations on the distributed amplifier concept and results in different constraints than are found in lossless distributed amplifier design. First order theory indicates that gain asymptotically approaches an upper bound and little benefit results from increasing the number of devices beyond certain limits. (Author)

Descriptors :   *Microwave amplifiers, *Distributed amplifiers, Monolithic structures(Electronics), Gallium arsenides, Field effect transistors, Input output devices, Transmission lines, Losses, Gain, Theory

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE