Accession Number : ADA113039

Title :   Elementary Excitations in Narrow-Gap Semiconductors by Picosecond Infrared Pulses.

Descriptive Note : Final rept. 1 Jan 77-31 Dec 81,

Corporate Author : BROWN UNIV PROVIDENCE RI DIV OF ENGINEERING

Personal Author(s) : Nurmikko,A V

PDF Url : ADA113039

Report Date : 23 Feb 1981

Pagination or Media Count : 23

Abstract : In this grant research we have demonstrated efficient switching of high-power carbon dioxide laser radiation at picosecond speeds in the narrow-gap semiconductors indium antimonide, lead telluride, and mercury cadmium telluride. Excitation from a modelocked Nd: glass laser has been used to generate pulses of 10 micrometer radiation of approximately 2psec in duration by a dense transient electron-hole gas in these materials. This work takes advantage of the unique material properties of the narrow-gap semiconductors. (Author)

Descriptors :   *Carbon dioxide lasers, *Infrared radiation, *Narrow gap semiconductors, *Infrared pulses, Optical materials, Optical equipment, Optical communications, Excitation, Q switching, Indium compounds, Cadmium tellurides, Mercury compounds, Glass lasers, Lead compounds

Subject Categories : Lasers and Masers
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE