Accession Number : ADA113099

Title :   XPS Study of Chemically Etched GaAs and InP.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s) : Bertrand,P A

PDF Url : ADA113099

Report Date : 15 Mar 1982

Pagination or Media Count : 26

Abstract : The surface composition of p-type GaAs etched in HCl or Br2 in methanol, and n-type InP etched in HCl, H2SO4, HNO3 or Br2 in methanol have been studied by means of x-ray photoelectron spectroscopy (XPS). The surface compositions of GaAs and the binding energy of the surface As atoms vary with the etching solution and with the extent of oxidation of the surface. The full width at half-maximum of the Ga(3p) photoelectron peak increases upon exposure of etched GaAs to air. The XPS results are compared with Schottky barrier heights previously measured for similarly prepared surfaces with Pb contacts. The amount of oxidized P on InP surfaces is higher after an HNO3 etch than after HC1, H2SO4, of Br2/methanol treatments. An HC1 etch leaves an unoxidized slightly In-rich surface. (Author)

Descriptors :   *X ray photoelectron spectroscopy, *Etching, *Gallium arsenides, *Indium, *Semiconductors, Carbinols, Hydrochloric acid, Nuclear binding energy, Oxidation, Surfaces, Nitric acid, P type semiconductors, N type semiconductors

Subject Categories : Fabrication Metallurgy
      Nuclear Physics & Elementary Particle Physics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE