Accession Number : ADA113211

Title :   Investigation of the Current Voltage Relationship for Low Barrier Schottky Diodes.

Descriptive Note : Final technical rept.,

Corporate Author : KENNEDY (D P) AND ASSOCIATES INC GAINESVILLE FL

Personal Author(s) : Kennedy,David P

PDF Url : ADA113211

Report Date : Feb 1982

Pagination or Media Count : 238

Abstract : A model is developed for the current voltage characteristics of metal, p-type semiconductor Schottky barriers. The model accounts for transition of electrons from the semiconductor valence band to empty states below the metal Fermi energy. These transitions lead to an effective barrier energy that is lower than predicted by classical models. The model also includes two junction current mechanisms that give rise to higher reverse currents than that predicted classically. (Author)

Descriptors :   *Schottky barrier devices, *P type semiconductors, *Diodes, *Voltage, *Currents, Fermi surfaces, Reversible, Energy, Models, Valence bands, Electrons, Junctions, Transitions

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE