Accession Number : ADA113645

Title :   Additional P(3/2) and P(1/2) Infrared Excited State Lines of Gallium and Indium in Silicon.

Descriptive Note : Interim technical rept. Jun 79-Sep 81,


Personal Author(s) : Rome,John J ; Spry,Robert J ; Chandler,Thomas C ; Brown,Gail J ; Covington,B C

PDF Url : ADA113645

Report Date : Feb 1982

Pagination or Media Count : 23

Abstract : Infrared excitation spectra were measured for the p3/2 lines of gallium in silicon. Two missing lines were observed, and a previous weak or doubtful one was confirmed. Spectra were also obtained of the p1/2 lines of gallium and indium in silicon, demonstrating for the first time the 4p' line for both dopants. Complete correspondence now exists between all observed excited state lines of gallium and indium in silicon and the lines of boron and aluminum, and with those predicted by theory. From the new spectral data, the spin-orbit splitting of the valence bands is calculated to be 42.62 + or - 0.04 meV. (Author)

Descriptors :   *Infrared spectroscopy, *Excitation, *Spectral lines, Gallium compounds, Spin states, Molecular orbitals, Silicon, Indium compounds, Valence bands, Infrared spectra, Aluminum, Boron, Theory, Predictions

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Nuclear Physics & Elementary Particle Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE