Accession Number : ADA113789

Title :   Advanced Submicron FETs.

Descriptive Note : Semi-annual rept. May-Oct 81,

Corporate Author : VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Personal Author(s) : Bandy,S ; Nishimoto,C ; Zdasiuk,G ; Hooper,C

PDF Url : ADA113789

Report Date : Mar 1982

Pagination or Media Count : 26

Abstract : Replacing the mushroom gate profile with a better collimated evaporation has resulted in FETs with equivalent performance. Balanced FETs have been fabricated with equivalent dc performance to their unbalanced counterparts, but with inferior rf performance. (Author)

Descriptors :   *Field effect transistors, *Gallium arsenides, *Low noise amplifiers, Gates(Circuits), Performance(Engineering), Direct current, Epitaxial growth, Radiofrequency, Evaporation, Sources

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE