Accession Number : ADA113808

Title :   GaAs Surface Passivation for Device Applications.

Descriptive Note : Interim technical rept. no. 5, 1 Oct 80-31 Mar 81,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Personal Author(s) : Elliott,K R ; Kowalczyk,S P ; Grant,R W ; Miller,D L

PDF Url : ADA113808

Report Date : Dec 1981

Pagination or Media Count : 69

Abstract : This document is the interim report number 5 which covers the period 10/01/80 through 03/31/81 for Contract No. F33615-78-C1591 entitled 'GaAs Surface Passivation for Device Applications.' C-V and I-V measurements are reported for several GaAs (100) MIS samples. Both MBE and bulk grown GaAs samples were studied; several of the MBE grown samples had Al(1-x)Ga(x)As layers between the GaAs and insulator. Insulators formed by plasma oxidation of the Al(1-x)Ga(x)As layers and by deposition of silicon nitride were investigated. A novel As capping technique has been developed to transfer MBE grown Al(1-x)Ga(x)As samples in air into another vacuum system without surface contamination. (Author)

Descriptors :   *N TYPE SEMICONDUCTORS, *Gallium arsenides, *Passivity, *Aluminum, X ray photoelectron spectroscopy, Oxidation, Plasmas(Physics), Insulation, Charge carriers, Silicon nitrides, Molecular beams, Epitaxial growth, Vapor deposition, layers, Ions

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE